Molecular beam epitaxy (MBE) on GaAs and InP substrates.
Epiwafers for photonic devices: edge-emitting lasers, VCSELs, p-i-n photodiodes etc.
Non-destructive epiwafer characterization (surface defect density analysis, PL spatial mapping).
Careful calibration of epi-layer composition, thickness, and doping level using X-ray characterization, PL measurements, ECV profiling.
Customer’s design.